Description: THIS LISTING IS FOR (4 PCS) OF KM416S4030BT-G10 BY SAMSUNGSynchronous DRAM, 4MX16, 7ns, CMOS, TSOP2-54 Part #: KM416S4030BT-G10 Part Category: Memory ICs Manufacturer: Samsung Semiconductor Division Description: Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54 Mfr Package Description0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 StatusDiscontinued Sub CategoryDRAMs Access ModeFOUR BANK PAGE BURST Access Time-Max7.0 ns Clock Frequency-Max (fCLK)100.0 MHz Interleaved Burst Length1,2,4,8 I/O TypeCOMMON JESD-30 CodeR-PDSO-G54 JESD-609 Codee0 Memory Density6.7108864E7 bit Memory IC TypeSYNCHRONOUS DRAM Memory Width16 Number of Functions1 Number of Ports1 Number of Terminals54 Number of Words4194304.0 words Number of Words Code4M Operating ModeSYNCHRONOUS Operating Temperature-Min0.0 Cel Operating Temperature-Max70.0 Cel Organization4MX16 Output Characteristics3-STATE Package Body MaterialPLASTIC/EPOXY Package CodeTSOP2 Package Equivalence CodeTSOP54,.46,32 Package ShapeRECTANGULAR Package StyleSMALL OUTLINE, THIN PROFILE Peak Reflow Temperature (Cel)NOT SPECIFIED Qualification StatusNot Qualified Refresh Cycles4096.0 Seated Height-Max1.2 mm Sequential Burst Length1,2,4,8,FP Standby Current-Max0.001 Amp Supply Current-Max0.12 Amp Supply Voltage-Nom (Vsup)3.3 V Supply Voltage-Min (Vsup)3.0 V Supply Voltage-Max (Vsup)3.6 V Surface MountYES TechnologyCMOS Temperature GradeCOMMERCIAL Terminal FinishTin/Lead (Sn/Pb) Terminal FormGULL WING Terminal Pitch0.8 mm Terminal PositionDUAL Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED Length22.22 mm Width10.16 mm Additional FeatureAUTO/SELF REFRESH Listing and template services provided by inkFrog
Price: 10.95 USD
Location: Granbury, Texas
End Time: 2024-12-01T14:00:52.000Z
Shipping Cost: N/A USD
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Restocking Fee: No
Return shipping will be paid by: Buyer
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
Return policy details:
MPN: KM416S4030BT-G10
Brand: Samsung
